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PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 - 770 MHz
Description
The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA070601E Package H-36265-2
PTFA070601F Package H-37265-2
2-Carrier WCDMA Performance
VDD = 28 V, IDQ = 600 m A, = 760 MHz, 3GPP WCDMA s ignal, P/A R = 8 dB, 10 MHz carrier spacing
-25 -30 55 50
Features
* * Broadband internal matching Typical WCDMA performance, 760 MHz, 28 V - Average output power = 12 W - Gain = 19 dB - Efficiency = 29% Typical CW performance, 760 MHz, 28 V - Output power at P-1dB = 60 W - Gain = 19 dB - Efficiency = 72% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power Pb-free and RoHS-compliant
IM3 (dBc), ACPR (dBc)
45
-35 -40 -45 -50 -55 29 31 33
Efficiency IM3
40 35 30 25 20 15
Drain Efficiency (%)
*
* * * *
ACPR
35 37 39 41 43 45 47
10 5
Output Power, avg. (dBm )
RF Characteristics
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 12 W AVG, = 760 MHz
Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IMD Gps
Min
-- -- --
Typ
-37 19 29
Max
-- -- --
Unit
dBc dB %
D
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 01, 2009-04-16
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 60 W PEP, = 760 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
18 46.5 --
Typ
19.5 48 -31
Max
-- -- -29
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.15 2.3 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 600 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 60 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 219 1.25 -40 to +150 0.8
Unit
V V C W W/C C C/W
Ordering Information
Type and Version PTFA070601E PTFA070601F V4 V4 Package Outline H-36265-2 H-37265-2 Package Description Thermally-enhanced, slotted flange, single-ended Thermally-enhanced, earless flange, single-ended Shipping Tray Tray Marking PTFA070601E PTFA070601F
*See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 01, 2009-04-16
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 600 mA, = 760 MHz TCASE = -10C
22 21 20
Broadband Performance
VDD = 28 V, IDQ = 600 mA, POUT = 45 dBm
TCASE = 25C Gain TCASE = 80C
75
50
-4
Gain (dB), Efficiency (%)
65
45 40 35
-8 -10
55 45
19 18 17 16 15 36 38 40 42 44 46 48 50 35
Return Loss
30 25 20 15 710
-12 -14
Efficiency
25 15
Gain
-16 -18 -20 770
720
730
740
750
760
Output Power (dBm)
Frequency (MHz)
IM3 vs. Output Power at Selected Biases VDD = 28 V, = 760 MHz, tone spacing = 1 MHz
Broadband Performance (at P-1dB)
VDD = 28 V, IDQ = 600 mA
-20 Intermodulation Distortion (dBc)
Gain (dB), Efficiency (%)
65
51
-25 -30 -35 -40 -45 -50 -55 -60 -65 29 31 33
IDQ = 700 mA IDQ = 600 mA
60 50 45 40 35 30 25 20 15 710 49
Output Power Gain
48 47 46 770
IDQ = 450 mA
35
37
39
41
43
45
47
720
730
740
750
760
Output Power, Avg. (dBm)
Frequency (MHz)
Data Sheet
3 of 10
Rev. 01, 2009-04-16
Output Power (dBm)
55
Efficiency
50
Input Return Loss (dB)
Efficiency
-6
Drain Efficiency (%)
Gain (dB)
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Power (P-1dB) vs. Drain Voltage
IDQ = 600 mA, = 760 MHz
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 600 mA, = 760 MHz, tone spacing = 1 MHz
-15
49.5
Intermodulation Distortion (dBc)
-25 -35 -45 -55 -65 -75 28 30
IM3
Efficiency
50
49
Drain Efficiency (%)
40 30
Output Power (dBm)
48.5 48 47.5 47 46.5 22 24 26 28 30 32 34
IM5
20
IM7
10 0 32 34 36 38 40 42 44 46
Output Power, Avg. (dBm)
Drain Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.8 A 2.4 A 6.0 A 12.0 A 1.00 0.99 0.98 0.97 0.96 -20 18.0 A 24.0 A 32.0 A
Normalized Bias Voltage (V)
1.02 1.01
0
20
40
60
80
100
Case Temperature (C)
Data Sheet
4 of 10
Rev. 01, 2009-04-16
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
R --
Z Source
Z Load
- WAVE LE NGTH S T OW A
RD G E NE
D
RA T O
G S
Z Load
800 MHz
0.0
0.1
W ARD LOAD THS TO L E NG
700 MHz
Frequency
MHz 700 720 740 760 800 R
Z Source
jX -4.82 -4.40 -3.91 -3.40 -2.39 5.32 5.07 4.84 4.69 4.55
Z Load
R 3.14 3.01 2.88 2.79 2.69 jX 0.61 1.02 1.44 1.90 2.82
Z Source
800 MHz 700 MHz
0.1
W <---
A VE
0. 2
See next page for circuit information
Data Sheet
5 of 10
Rev. 01, 2009-04-16
0.2
0.2
0.1
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F R3 2K V C3 0.001F R4 2K V R5 5.1 V C4 10F 35V R6 10 V C5 0.1F
L1 VDD R7 5.1K C6 0.1F C7 0.01F C8 75pF l6 R8 10 V l7 C24 100pF l9 l 10 C22 7.0pF l 11 l 12 C23 1.7pF l 13 J2 C12 75pF C13 1F C14 10F 50V C15 0.1F C16 10F 50V
C9 75pF J1 l1 l2 l3 C10 4.7pF l4 C11 5.6pF l5
DUT
l8
L2 C17 75pF C18 1F C19 10F 50V C20 0.1F C21 10F 50V
Reference circuit schematic diagram for = 760 MHz
Circuit Assembly Information
DUT PCB PTFA070601E or PTFA070601F 0.76 mm [.030"] thick, r = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper
Microstrip
l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 l11 l12 l13
Electrical Characteristics at 760 MHz
0.056 0.091 0.016 0.011 0.050 0.128 0.123 0.146 0.005 0.075 0.026 0.022 , 50.0 , 50.0 , 50.0 , 50.0 , 7.5 , 66.5 , 52.2 , 11.0 , 11.0 , 37.8 , 37.8 , 50.0
Dimensions: L x W (mm)
12.19 x 1.37 19.81 x 1.37 3.56 x 1.37 2.29 x 1.37 9.58 x 16.21 28.45 x 0.79 26.67 x 1.27 28.58 x 10.54 0.97 x 10.54 15.82 x 2.16 5.56 x 2.16 4.70 x 1.37
Dimensions: L x W (in.)
0.480 0.780 0.140 0.090 0.377 1.120 1.050 1.125 0.038 0.623 0.219 0.185 x x x x x x x x x x x x 0.054 0.054 0.054 0.054 0.638 0.031 0.050 0.415 0.415 0.085 0.085 0.054
Data Sheet
6 of 10
Rev. 01, 2009-04-16
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
R5 R4 C4 C5 C8 C7 C6
R 3 C3
C1 QQ1
VDD
L1 C13 C14 C22
C16
VDD
C12
R2 C2 R6 R7 R1
Q1 R8 C11
C15
C24
RF_IN
C9 C10 C23
RF_OUT
C20 C17 C18 L2 C19 C21
VDD
a070601 ef - v4_ cd_4- 20 - 09
Reference circuit schematic diagram for = 760 MHz
Component
C1, C2, C3 C4 C5, C6, C15, C20 C7 C8, C9, C12, C17 C10 C11 C13, C18 C14, C16, C19, C21 C22 C23 C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Capacitor, 0.01 F Ceramic capacitor, 75 pF Ceramic capacitor, 4.7 pF Ceramic capacitor, 5.6 pF Capacitor, 1.0 F Tantalum capacitor, 10 F, 50 V Ceramic capacitor, 7.0 pF Ceramic capacitor, 1.7 pF Ceramic capacitor, 100 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2k ohms Chip resistor 1.3k ohms Chip resistor 2k ohms Potentiometer 2k ohms Chip resistor 5.1k ohms Chip resistor 10 ohms
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Garrett Electronics ATC ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 200B 103 100B 750 100B 4R7 100B 5R6 920C105 TPSE106K050R0400 100B 7R0 100B 1R7 100B 101 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND
*Gerber files for this circuit available on request Data Sheet 7 of 10 Rev. 01, 2009-04-16
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-36265-2
45 X 2.03 [.080] 2X 7.11 [.280] 6. ALL FOUR CORNERS
D S
FLANGE 9.78 [.385] 3.05 [.120] C L
2.66.51 [.105.020]
LID 10.16.25 [.400.010]
15.49.51 [.610.020]
2X R1.52 [R.060] 4X R0.63 [R.025] MAX C L
G
C66065-A2326-C001-01-0027 H-36265-2.dwg
15.23 [.600]
4X R1.52 [R.060]
SPH 1.57 [.062]
10.16.25 [.400.010]
3.61.38 [.142.015] 0.0381 [.0015] -A1.02 [.040] 20.31 [.800]
6.
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. 7. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] Exposed metal plane on top and bottom of ceramic insulator. All tolerances 0.127 [.005] unless specified otherwise.
Data Sheet
8 of 10
Rev. 01, 2009-04-16
PTFA070601E PTFA070601F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-37265-2
45 X 2.03 [.080] 6. 2X 7.11 [.280] ALL FOUR CORNERS
D
2.66.51 [.105.020]
FLANGE 10.16 [.400]
C L
LID 10.16.25 [.400.010]
15.49.51 [.610.020]
G
4X R0.63 [R.025] MAX
C66065-A2327-C001-01-0027 H-37265-2.dwg
C L
SPH 1.57 [.062]
10.16.25 [.400.010]
3.61.38 [.142.015] 0.0381 [.0015] -A1.02 [.040] 10.16 [.400]
S
1. 2. 3. 4. 5. 6. 7.
Diagram Notes--unless otherwise specified: Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] Exposed metal plane on top and bottom of ceramic insulator. All tolerances 0.127 [.005] unless specified otherwise.
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 01, 2009-04-16
PTFA0706010E/F Confidential, Limited Internal Distribution Revision History: 2009-04-16 None Previous Version: Page Subjects (major changes since last revision)
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-04-16 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 01, 2009-04-16

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